murs140 & MURS160 document number 88688 09-aug-05 vishay general semiconductor www.vishay.com 1 do-214aa (smb) surface mount ultrafast plastic rectifier major ratings and characteristics i f(av) 1.0 a v rrm 400 v, 600 v i fsm 35 a t rr 50 ns v f 1.05 v t j max. 175 c features glass passivated chip junction ideal for automated placement ultrafast reverse recovery time low switching losse s, high efficiency high forward surge capability meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer and telecommuni- cation mechanical data case: do-214aa (smb) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol murs140 MURS160 unit device marking codes mg mj maximum repetitive peak reverse voltage v rrm 400 600 v working peak reverse voltage v rwm 400 600 v maximum dc blocking voltage v dc 400 600 v maximum average forward rectified current at see figure 1 t l = 150 c t l = 125 c i f(av) 1.0 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 35 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88688 09-aug-05 murs140 & MURS160 vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified# notes: (1) pulse test: t p = 300 s pulse, duty cycle 2 % thermal characteristics t a = 25 c unless otherwise specified ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol murs 140 murs 160 unit maximum instantaneous forward voltage (1) at i f = 1.0 a, at i f = 1.0 a, t j = 25 c t j = 150 c v f 1.25 1.05 v maximum instantaneous reverse current at rated dc blocking voltage (1) t j = 25 c t j = 150 c i r 5.0 150 a maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns maximum reverse recovery time at i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t rr 75 ns maximum forward recovery time at i f = 1.0 a, di/dt = 100 a/s, recovery to 1.0 v t fr 50 ns parameter symbol murs140 MURS160 unit typical thermal resistance junction to ambient r jl 13 c/w figure 1. forward current derating curve 0 4.0 5.0 6.0 0 25 50 75 100 125 150 175 average forward rectified current (a) lead temperature ( c) 2.0 3.0 1.0 figure 2. maximum non-repetitive peak forward surge current 0 10 20 30 40 50 1 100 10 peak forward surge current (a) number of cycles at 50 h z
murs140 & MURS160 document number 88688 09-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics instantaneous forward voltage (v) 0.01 0.1 10 1 80 0.4 0.8 1.2 1.6 2.0 2.4 instantaneous forward current (a) 0 t j = 175 c t j = 100 c t j =25c 020 60 40 100 80 instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) t j = 175 c t j =25c 0.001 0.01 1 0.1 10 100 t j = 100 c figure 5. typical junction capacitance reverse voltage (v) junction capacitance (pf) 0.1 1 1 10 10 100 100 t j =25c f = 1.0 mhz vsig = 50m vp-p 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band do-214aa (smb) 0.85 max (2.159 max) 0.060 min (1.52 min) 0.220 ref 0.086 min (2.18 min) mounting pad layout 0 (0)
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